MJE3055T [Wing Shing]
SILICON EPITAXIAL PLANAR TRANSISTOR; 硅外延平面晶体管
| 型号： | MJE3055T |
| 厂家： | 
WING SHING COMPUTER COMPONENTS |
| 描述： | SILICON EPITAXIAL PLANAR TRANSISTOR |
| 文件： | 总1页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON EPITAXIAL
MJE3055T/MJE2955T
PLANAR TRANSISTOR
GENERAL DESCRIPTION
Complementary, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
TO-220
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
MIN
MAX
70
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
VBE = 0V
-
-
-
60
V
10
A
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
A
ICM
Ptot
VCEsat
VF
tf
-
-
-
1.5
Tmb 25
75
1.2
2.0
-
W
V
IC = 4.0A; IB = 0.4A
IF = 4.0A
V
Fall time
s
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
PARAMETER
CONDITIONS
MIN
MAX
70
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
VBE = 0V
-
-
60
V
5
v
-
10
A
Base current (DC)
-
-
6
A
IB
Ptot
Total power dissipation
Tmb 25
75
W
Storage temperature
-55
-
150
150
Tstg
Tj
Junction temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VCB=70V
MIN
MAX
1.0
UNIT
mA
mA
v
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
-
-
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
VEB=5V
2.5
IC=1mA
60
-
IC = 4.0A; IB = 0.4A
IC = 4.0A; VCE = 4V
IC = 0.5A; VCE = 10V
VCB = 10V
1.2
100
-
V
20
5
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
MHz
pF
us
350
Cc
ton
Tum-off storage time
us
ts
Fall time
us
tf
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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